RSQ030P03 transistor 1/4 dc-dc converter ( ? 30v, ? 3a) RSQ030P03 z features 1) low on-resistance.(90m ? at 4.5v) 2) high power package. 3) high speed switching. 4) low voltage drive.(4.5v) z applications z external dimensions (units : mm) 1.6 2.8 0.4 0.16 ( 3 ) 0.85 ( 2 ) 2.9 ( 1 ) each lead has same dimensions abbreviatedsymbol : tn (6) (5) (4) tsmt6 dc-dc converter z structure silicon p-channel mosfet z packaging specifications taping RSQ030P03 type tr 3000 package basic ordering unit (pieces) code z equivalent circuit (1) ? 1 ? 2 ? 1 esd protection diode (1)drain (2)drain (3)gate (4)source (5)drain (6)drain (2) (3) (4) (5) (6) ? 2 body diode
RSQ030P03 transistor 2/4 z absolute maximum ratings (ta=25 c) parameter v v a a w c a a c v dss v gss i s p d tch i d i sp i dp tstg symbol ? 30 20 ? 1 ? 4 1.25 150 ? 55~ + 150 limits unit ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board drain ? source voltage gate ? source voltage drain current source current (body diode) total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 ? 1 ? 2 3 12 < = < = z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss y fs c oss c rss min. ? ? 30 ? ? 1.0 ? ? 1.5 ? ? ? ? ? ? 60 440 ? 110 80 10 ? ? 1 ? 2.5 80 ? 90 125 ? ? ? ? a v gs = 20v, v ds = 0v i d = ? 1 , v gs = 0v v ds = ? 30v, v gs = 0v v ds = ? 10 v, i d = ? 1.5a v ds = ? 10v, i d = ? 1 i d = ? 3 a, v gs = ? 10 v v ds = ? 10v, v gs = 0v f = 1mhz v a v m ? m ? pf s pf pf t d(on) ? 10 ? i d = ? 1.5a v dd ? 15v ns t r ? 13 ? v gs = ? 10 v ns t d(off) ? 40 ? r l = 10 ? ns t f ? 12 ? r gs = 10 ? ns typ. max. unit conditions gate-source leakage gate threshold voltage foward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-off delay time rise time fall time drain-source breakdown voltage static drain-source on-state resistance zero gate voltage drain current total gate charge gate-source charge gate-drain charge forward voltage qg qgs qgd vsd m ? ? v nc nc nc ? 1.2 ? ? ? ? ? ? ? 100 6.0 1.6 2.0 ? 140 ma, ma i d = ? 3 a, v gs = ? 4.5 v i d = ? 1.5 a, v gs = ? 4.0 v v dd ? 15v v gs = ? 5 v i s = ? 1 a, v gs =0 v ? ? ? ? ? ? ? pulsed i d = ? 3a body diode characteristics (source-drain characteristics)
RSQ030P03 transistor 3/4 z electrical characteristic curves fig.1 typical transfer characteristics 0 0.5 1.0 0.001 0.1 1 0.01 10 1.5 gate ? source voltage : ? v gs [ v ] drain current : ? i d (a) 2.0 2.5 3.0 3.5 4.0 ta = 125 c 75 c 25 c ? 25 c v ds =? 10v pulsed fig.2 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance ? 4.5v ? 10v v gs = ? 4v r ds ( on )[ m ?] vs.drain current ta = 25 c pulsed fig.3 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance r ds ( on )[ m ?] vs.drain current ta=125 75 25 ? 25 v gs =? 10v pulsed c c c c fig.4 static drain ? source on ? state resistance vs.drain ? current 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance r ds ( on )[ m ?] ta=125 75 25 ? 25 c c c c v gs =? 4.5v pulsed fig.5 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance ta=125 75 25 ? 25 r ds ( on )[ m ?] vs.drain ? current c c c c v gs =? 4v pulsed 0 0.5 1.0 1.5 source ? drain voltage : ? v sd [ v ] fig.6 reverse drain current 0.01 reverse drain current : ? i dr [ a ] 0.1 10 1 2.0 ta=125 75 25 ? 25 source-drain current c c c c v gs =? 0v pulsed 0.01 0.1 1 10 100 drain ? source voltage : ? v ds [ v ] fig.7 typical capactitance 10 100 10000 1000 vs.drain ? source voltage capacitance : c [ pf ] ciss coss crss ta = 25 c f = 1mhz v gs = 0v 0.01 0.1 1 10 drain current : ? i d [ a ] fig.8 switching characteristics 1 10 1000 100 td ( off ) td ( on ) tr tf switching time : t [ ns ] ta = 25 c v dd =? 15v v gs =? 10a r g = 10 ? pulsed fig.9 dynamic input characteristics 01 0 4 8 6 total gate charge : qg [ nc ] gate-source voltage: -v gs [ v ] 23 4 5 1 2 3 5 6 7 ta = 25 c v dd =? 15v i d =? 3a r g = 10 ? pulsed
RSQ030P03 transistor 4/4 z measurement circuits fig.10 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 10% 90% 10% 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.11 switching waveforms 50% 50% pulse width fig.12 gate charge measurement circuit v gs r g v ds d.u.t. i d r l v dd i g (const) fig.13 gate charge waveforms v gs qg qgs qgd v g charge
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